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Valeo and ROHM Semiconductor Co-Develop Next-Generation Power Electronics for Electric Vehicles

Valeo, a global leader in automotive technology, and ROHM Semiconductor, a prominent player in the semiconductor industry, have joined forces to develop advanced power modules for electric motor inverters. This collaboration marks a significant milestone in advancing electrified mobility solutions, combining Valeo’s expertise in mechatronics, thermal management, and software development with ROHM’s cutting-edge Silicon Carbide (SiC) technology. Powering the Future …

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Dual Gate Drivers from STMicroelectronics

Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. …

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