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Dual Gate Drivers from STMicroelectronics

Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. …

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First Fully Configurable Gate Driver for Silicon Carbide MOSFETs

Reduce Switching Losses up to 50% While Accelerating Time to Market with the First Fully Configurable Digital Gate Driver for Silicon Carbide MOSFETs – Now Production Ready New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while maximizing efficiency As demand for electric buses and other electrified heavy transport vehicles increases to …

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